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X20C04J-15 PDF预览

X20C04J-15

更新时间: 2024-01-13 07:26:48
品牌 Logo 应用领域
XICOR 内存集成电路静态存储器
页数 文件大小 规格书
15页 69K
描述
Nonvolatile Static RAM

X20C04J-15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, LCC-32Reach Compliance Code:unknown
风险等级:5.89Is Samacsys:N
最长访问时间:150 ns其他特性:MINIMUM 100 YEARS OF DATA RETENTION
JESD-30 代码:R-PQCC-J32JESD-609代码:e0
长度:13.97 mm内存密度:4096 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:32字数:512 words
字数代码:512工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512X8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:3.55 mm最大待机电流:0.00025 A
子类别:SRAMs最大压摆率:0.1 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11.43 mm
Base Number Matches:1

X20C04J-15 数据手册

 浏览型号X20C04J-15的Datasheet PDF文件第2页浏览型号X20C04J-15的Datasheet PDF文件第3页浏览型号X20C04J-15的Datasheet PDF文件第4页浏览型号X20C04J-15的Datasheet PDF文件第5页浏览型号X20C04J-15的Datasheet PDF文件第6页浏览型号X20C04J-15的Datasheet PDF文件第7页 
4K  
X20C04  
512 x 8 Bit  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
High Reliability  
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a  
static RAM overlaid bit-for-bit with a nonvolatile electri-  
cally erasable PROM (E2PROM). The X20C04 is fabri-  
cated with advanced CMOS floating gate technology to  
achieve low power and wide power-supply margin. The  
X20C04 features the JEDEC approved pinout for byte-  
widememories,compatiblewithindustrystandardRAMs,  
ROMs, EPROMs, and E2PROMs.  
Endurance: 1,000,000 Nonvolatile Store  
Operations  
Retention: 100 Years Minimum  
Power-on Recall  
—E2PROM Data Automatically Recalled Into  
SRAM Upon Power-up  
Lock Out Inadvertent Store Operations  
Low Power CMOS  
The NOVRAM design allows data to be easily trans-  
ferred from RAM to E2PROM (store) and E2PROM to  
RAM (recall). The store operation is completed in 5ms or  
less and the recall operation is completed in 5µs or less.  
Standby: 250µA  
Infinite E2PROM Array Recall, and RAM Read  
and Write Cycles  
Compatible with X2004  
Xicor NOVRAMS are designed for unlimited write  
operations to RAM, either from the host or recalls from  
E2PROM, andaminimum1,000,000storeoperationsto  
the E2PROM. Data retention is specified to be greater  
than 100 years.  
PIN CONFIGURATION  
LCC  
PLCC  
PLASTIC  
CERDIP  
NE  
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
2
WE  
NC  
4
3
2
1
32 31 30  
29  
3
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A
A
A
A
A
A
A
5
6
7
8
9
A
4
A
8
6
5
4
3
2
1
0
8
28  
27  
26  
25  
24  
23  
22  
21  
NC  
NC  
NC  
OE  
NC  
CE  
I/O  
5
NC  
NC  
OE  
NC  
CE  
I/O  
6
7
X20C04  
(TOP VIEW)  
X20C04  
8
10  
11  
12  
13  
9
10  
11  
12  
13  
14  
7
NC  
I/O  
I/O  
I/O  
I/O  
I/O  
7
0
1
2
6
5
4
3
I/O  
I/O  
I/O  
I/O  
V
0
6
14 15 16 17 18 19 20  
SS  
3825 FHD F03  
3825 FHD F02  
©Xicor, Inc. 1992, 1995, 1996 Patents Pending  
3825-2.8 7/31/97 T4/C0/D0 SH  
Characteristics subject to change without notice  
1

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