Datasheet > WSD40120DN56G

WSD40120DN56G

更新时间： 2025-08-08 19:10:43

品牌	Logo	应用领域
微硕 - WINSOK		/
页数	文件大小	规格书
5页	2634K
描述
漏源电压Vdss(V):40.0V;额定电流Id(A):120.0A;类型:N-Channel;最小工作温度(℃):0;元器件封装:DFN5X6-8;

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WSD40120DN56G 数据手册

WSD40120DN56G

N-Ch MOSFET

General Description

Product Summery

The WSD40120DN use advanced SGT

MOSFET technology to provide low RDS(ON),

low gate charge, fast switching and excellent

avalanche characteristics.

BVDSS

RDSON

40V

1.8mΩ

120A

This device is specially designed to get better

ruggedness and suitable to use in

Applications

z Consumer electronic power supply

z Synchronous-rectification

z Synchronous-rectification applications

Features

Low RDS(on) & FOM

Extremely low switching loss

Excellent stability and uniformity or Invertors

DFN5X6-8 Pin Configuration

Absolute Maximum Ratings at Tj=25℃ unless otherwise noted

Symbol

Parameter

Rating

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V¹

V_GS

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

±20

120

Continuous Drain Current, V_GS@ 10V¹

Pulsed Drain Current²

400

EAS

Single Pulse Avalanche Energy³

I_AS

Avalanche Current

Total Power Dissipation⁴

℃

125

P_D@T_C=25℃

T_STG

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

Unit

℃/W

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

1.0

R_θJC

---

Rev 1: May.2019

www.winsok.tw

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