Datasheet > WNSC2D30650W

WNSC2D30650W

更新时间： 2024-04-09 18:59:30

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描述
Silicon Carbide Schottky diode in a 2-lead TO247-2L plastic package, designed for high frequency switched-mode power supplies.

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WNSC2D30650W 数据手册

WeEn Semiconductors

WNSC2D30650W

Silicon Carbide Diode

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward current

I_F= 30 A; T_j= 25 °C; Fig. 5

I_F= 30 A; T_j= 150 °C; Fig. 5

I_F= 30 A; T_j= 175 °C; Fig. 5

V_R= 650 V; T_j= 25 °C; Fig. 6

V_R= 650 V; T_j= 175 °C; Fig. 6

1.45

1.75

1.85

1.7

2.1

2.4

100

200

I_R

reverse current

μA

Dynamic characteristics

Q_r

recovered charge

I_F= 30 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; Fig. 7

C_d

diode capacitance

f = 1 MHz; V_R= 1 V; T_j= 25 °C

f = 1 MHz; V_R= 300 V; T_j= 25 °C

f = 1 MHz; V_R= 600 V; T_j= 25 °C

I_R= 6.3 A; L = 5 mH; T_j(init)= 25 °C

980

105

100

E_as

non-repetitive

avalanche energy

V_o= 1.180 V; R_s= 0.0308 Ω

(1) T_j= -55 °C; typical values

(2) T_j= 0 °C; typical values

(3) T_j= 25 °C; typical values

(4) T_j= 100 °C; typical values

(5) T_j= 150 °C; typical values

(6) T_j= 175 °C; typical values

Fig. 6. Reverse leakage current as a function of reverse

voltage; typical value

Fig. 5. Forward current as a function of forward

voltage; typical values

WNSC2D30650W

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Product data sheet

27 January 2022

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