Datasheet > WNSC2D30650W

WNSC2D30650W

更新时间： 2024-04-09 18:59:30

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	538K
描述
Silicon Carbide Schottky diode in a 2-lead TO247-2L plastic package, designed for high frequency switched-mode power supplies.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WNSC2D30650W 数据手册

WeEn Semiconductors

WNSC2D30650W

Silicon Carbide Diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

V_RRM

repetitive peak reverse

voltage

650

V_RWM

crest working reverse

voltage

650

V_R

reverse voltage

650

I_F(AV)

average forward current

δ = 0.5; square-wave pulse; T_mb≤ 102 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5; t_p= 25 μs; T_mb≤ 102 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse

t_p= 10 μs; T_j(init)= 25 °C; square-wave pulse

sine-wave pulse; T_j(init)= 25 °C; t_p= 10 ms

155

1200

I²t

I²t for fusing

120

A²s

°C

stg

storage temperature

junction temperature

-55 to 175

175

T_j

I_F(AV)= I_F(RMS)× √δ

Fig. 2. Current derating as a function of mounting base

temperature

V_o= 1.180 V; R_s= 0.0308 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

WNSC2D30650W

All information provided in this document is subject to legal disclaimers.

Product data sheet

27 January 2022

3 / 11

1 234 5 6 7...11

下载PDF

与WNSC2D30650W相关器件

型号	品牌	描述	获取价格	数据表
WNSC2D401200CW	WEEN	Dual Silicon Carbide Schottky diode in a TO247-3L plastic package, designed for high frequ	获取价格
WNSC2D401200W	WEEN	Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency	获取价格
WNSC2D501200W	WEEN	Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency	获取价格
WNSC2M12120R	WEEN	Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high ef	获取价格
WNSC2M150120B7	WEEN	Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high ef	获取价格
WNSC2M150120W	WEEN	Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high effic	获取价格