5秒后页面跳转
WNSC5D06650 PDF预览

WNSC5D06650

更新时间: 2024-04-09 19:03:25
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
11页 454K
描述
Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies.

WNSC5D06650 数据手册

 浏览型号WNSC5D06650的Datasheet PDF文件第2页浏览型号WNSC5D06650的Datasheet PDF文件第3页浏览型号WNSC5D06650的Datasheet PDF文件第4页浏览型号WNSC5D06650的Datasheet PDF文件第5页浏览型号WNSC5D06650的Datasheet PDF文件第6页浏览型号WNSC5D06650的Datasheet PDF文件第7页 
WNSC5D06650  
Silicon Carbide Diode  
Rev.01 - 30 September 2022  
Product data sheet  
1. General description  
Silicon Carbide Schottky diode in a TO220-2L  
plastic package, designed for high frequency  
switched-mode power supplies.  
alogen-Free  
RoHS  
h
Lead-Free  
2. Features and benefits  
Highly stable switching performance  
Extremely fast reverse recovery time  
Superior in efficiency to Silicon Diode alternatives  
Reduced losses in associated MOSFET  
Reduced EMI  
Reduced cooling requirements  
RoHS compliant  
3. Applications  
Power factor correction  
Telecom / Server SMPS  
UPS  
PV inverter  
PC Silverbox  
LED / OLED TV  
Motor Drives  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Notes  
Values  
Unit  
Absolute maximum rating  
VRRM  
IF(AV)  
Tj  
repetitive peak reverse  
voltage  
650  
6
V
A
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 136 °C;  
Fig. 1; Fig. 2; Fig. 3  
junction temperature  
-55 to 175  
°C  
Symbol Parameter  
Static characteristics  
Conditions  
Notes Min  
Typ  
Max  
Unit  
VF  
forward voltage  
IF = 6 A; Tj = 25 °C; Fig. 5  
IF = 6 A; Tj = 150 °C; Fig. 5  
-
-
1.45  
1.80  
1.70  
V
V
2.20  
Dynamic characteristics  
Qr recovered charge  
IF = 6 A; dIF/dt = 500 A/μs; VR = 400 V;  
Tj = 25 °C; Fig. 7  
-
9
-
nC  

与WNSC5D06650相关器件

型号 品牌 获取价格 描述 数据表
WNSC5D06650D WEEN

获取价格

Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque
WNSC5D06650T WEEN

获取价格

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency s
WNSC5D06650X WEEN

获取价格

Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency
WNSC5D06650Y WEEN

获取价格

Silicon Carbide Schottky diode in a IITO220-2L plastic package, designed for high frequenc
WNSC5D08650 WEEN

获取价格

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency
WNSC5D08650D WEEN

获取价格

Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque
WNSC5D08650T WEEN

获取价格

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency s
WNSC5D08650X WEEN

获取价格

Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency
WNSC5D08650Y WEEN

获取价格

Silicon Carbide Schottky diode in a IITO220-2L plastic package, designed for high frequenc
WNSC5D10650 WEEN

获取价格

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency