Datasheet > WNSC2D04650X

WNSC2D04650X

更新时间： 2024-04-09 18:59:36

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	456K
描述
Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WNSC2D04650X 数据手册

WeEn Semiconductors

WNSC2D04650X

Silicon Carbide Diode

11. Characteristics

Table 8. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 4 A; T_j= 25 °C; Fig. 5

I_F= 4 A; T_j= 150 °C; Fig. 5

I_F= 4 A; T_j= 175 °C; Fig. 5

V_R= 650 V; T_j= 25 °C; Fig. 6

V_R= 650 V; T_j= 175 °C; Fig. 6

1.5

1.8

1.7

2.2

2.3

I_R

reverse current

0.2

μA

100

Dynamic characteristics

Q_r

recovered charge

I_F= 4 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; Fig. 7

6.5

C_d

diode capacitance

f = 1 MHz; V_R= 1 V; T_j= 25 °C

f = 1 MHz; V_R= 300 V; T_j= 25 °C

f = 1 MHz; V_R= 600 V; T_j= 25 °C

I_R= 3.5 A; T_j(init)= 25 °C; L = 5 mH

125

E_as

non-repetitive

avalanche energy

V_o= 0.760 V; R_s= 0.3433 Ω

(1) T_j= -55 °C; typical values

(2) T_j= 0 °C; typical values

(3) T_j= 25 °C; typical values

(4) T_j= 100 °C; typical values

(5) T_j= 150 °C; typical values

(6) T_j= 175 °C; typical values

Fig. 6. Reverse leakage current as a function of reverse

voltage; typical value

Fig. 5. Forward current as a function of forward

voltage; typical values

WNSC2D04650X

All information provided in this document is subject to legal disclaimers.

Product data sheet

21 January 2021

6 / 11

1...3 4 567 8 9...11

下载PDF

与WNSC2D04650X相关器件

型号	品牌	描述	获取价格	数据表
WNSC2D051200	WEEN	Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency	获取价格
WNSC2D051200D	WEEN	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque	获取价格
WNSC2D051400D	WEEN	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque	获取价格
WNSC2D06650	WEEN	Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency	获取价格
WNSC2D06650D	WEEN	Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high freque	获取价格
WNSC2D06650T	WEEN	Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency s	获取价格