Datasheet > WNSC2D04650X

WNSC2D04650X

更新时间： 2024-04-09 18:59:36

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描述
Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies.

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WNSC2D04650X 数据手册

WeEn Semiconductors

WNSC2D04650X

Silicon Carbide Diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

V_RRM

repetitive peak reverse

voltage

650

V_RWM

crest working reverse

voltage

650

V_R

reverse voltage

650

I_F(AV)

average forward current

δ = 0.5; square-wave pulse; T_h≤ 87 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5; t_p= 25 μs; T_h≤ 87 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse

t_p= 10 μs; T_j(init)= 25 °C; square-wave pulse

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse

235

I²t

I²t for fusing

A²s

°C

stg

storage temperature

junction temperature

-55 to 175

175

T_j

I_F(AV)= I_F(RMS)× √δ

Fig. 2. Current derating as a function of heatsink

temperature

V_o= 0.760 V; R_s= 0.3433 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

WNSC2D04650X

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Product data sheet

21 January 2021

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