Datasheet > WN3S30H170CBT

WN3S30H170CBT

更新时间： 2024-04-09 19:00:38

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描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO263 (D2PAK) plastic package.

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WN3S30H170CBT 数据手册

WeEn Semiconductors

WN3S30H170CBT

Dual power Schottky diode

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

forward voltage

I_F= 15 A; T_j= 25 °C; per diode; Fig. 6

I_F= 15 A; T_j= 125 °C; per diode; Fig. 6

0.81

0.67

0.2

0.90

I_R

reverse current

V_R= 170 V; T_j= 25 °C; per diode;

Fig. 7; Fig. 8

μA

V_R= 170 V; T_j= 125 °C; per diode;

Fig. 7; Fig. 8

0.4

V_o= 0.613 V; R_s= 0.0066 Ω

(1) T_j= 175 °C; typical values

(2) T_j= 175 °C; maximum values

(3) T_j= 25 °C; maximum values

(1) T_j= 25 °C; typical values

(2) T_j= 125 °C; typical values

(3) T_j= 150 °C; typical values

(4) T_j= 175 °C; typical values

Fig. 6. Forward current as a function of forward

voltage; per diode

Fig. 7. Reverse leakage current as a function of reverse

voltage; per diode; typical values

WN3S30H170CBT

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31 October 2022

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