Datasheet > WN3S30H100CX

WN3S30H100CX

更新时间： 2024-04-09 19:01:15

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描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO220F "full pack" plastic package.

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WN3S30H100CX 数据手册

WeEn Semiconductors

WN3S30H100CX

Dual power Schottky diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

V_RRM

repetitive peak reverse

voltage

100

V_RWM

crest working reverse

voltage

100

V_R

reverse voltage

100

I_F(AV)

average forward current

δ = 0.5 ; square-wave pulse; per diode;

Fig. 1; Fig. 2; Fig. 3

I_O(AV)

I_FSM

average output current

δ = 0.5 ; square-wave pulse; both diodes

conducting

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode; Fig. 4

330

363

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode

storage temperature

junction temperature

-40 to 150

150

°C

stg

T_j

I_F(AV)= I_F(RMS)× √δ

V_o= 0.532 V; R_s= 0.0077 Ω

a = form factor = I_F(RMS)/ I_F(AV)

V_o= 0.532 V; R_s= 0.0077 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values; per diode

Fig. 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values; per diode

WN3S30H100CX

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29 October 2021

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