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WG12019FR08 PDF预览

WG12019FR08

更新时间: 2024-02-09 07:56:59
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
4页 220K
描述
Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 800V V(RRM), 1 Element

WG12019FR08 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:PEAK TURN-OFF CURRENT IS 1200A
标称电路换相断开时间:80 µs配置:SINGLE
最大直流栅极触发电流:2000 mAJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1340 A断态重复峰值电压:1900 V
重复峰值反向电压:800 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:GATE TURN-OFF SCRBase Number Matches:1

WG12019FR08 数据手册

 浏览型号WG12019FR08的Datasheet PDF文件第2页浏览型号WG12019FR08的Datasheet PDF文件第3页浏览型号WG12019FR08的Datasheet PDF文件第4页 

与WG12019FR08相关器件

型号 品牌 获取价格 描述 数据表
WG12019FR09 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 900V V(RRM), 1 Element
WG12019FR10 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 1000V V(RRM), 1 Element
WG12019FR11 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 1100V V(RRM), 1 Element
WG12019FR12 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 1200V V(RRM), 1 Element
WG12019FR13 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 1300V V(RRM), 1 Element
WG12019FR16 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 1600V V(RRM), 1 Element
WG12019FR18 IXYS

获取价格

Gate Turn-Off SCR, 1340A I(T)RMS, 1900V V(DRM), 1800V V(RRM), 1 Element
WG12019R IXYS

获取价格

Silicon Controlled Rectifier, 1600 A, 1900 V, SYMMETRICAL GTO SCR
WG12019R03 IXYS

获取价格

Gate Turn-Off SCR, 1600A I(T)RMS, 1900V V(DRM), 300V V(RRM), 1 Element
WG12019R04 IXYS

获取价格

Gate Turn-Off SCR, 1600A I(T)RMS, 1900V V(DRM), 400V V(RRM), 1 Element