生命周期: | Obsolete | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
其他特性: | PEAK TURN-OFF CURRENT IS 1200A | 标称电路换相断开时间: | 80 µs |
配置: | SINGLE | 最大直流栅极触发电流: | 2000 mA |
最大直流栅极触发电压: | 1.4 V | JESD-30 代码: | O-CEDB-N2 |
通态非重复峰值电流: | 10000 A | 元件数量: | 1 |
端子数量: | 2 | 最大通态电流: | 670000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1340 A | 断态重复峰值电压: | 2000 V |
重复峰值反向电压: | 100 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | GATE TURN-OFF SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WG12020F01 | IXYS |
获取价格 |
Gate Turn-Off SCR, 2000V V(DRM), 100V V(RRM), 1 Element |
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WG12020FR | ETC |
获取价格 |
THYRISTOR|GTO|2KV V(DRM)|TO-200VAR74 |
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WG12020FR02 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 200V V(RRM), 1 Element |
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WG12020FR03 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1340 A, 2000 V, GATE TURN-OFF SCR |
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WG12020FR04 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 400V V(RRM), 1 Element |
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WG12020FR05 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 500V V(RRM), 1 Element |
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WG12020FR06 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 600V V(RRM), 1 Element |
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WG12020FR07 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 700V V(RRM), 1 Element |
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WG12020FR08 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 800V V(RRM), 1 Element |
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WG12020FR09 | IXYS |
获取价格 |
Gate Turn-Off SCR, 1340A I(T)RMS, 2000V V(DRM), 900V V(RRM), 1 Element |
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