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WG10036R23 PDF预览

WG10036R23

更新时间: 2024-10-05 04:54:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
1页 32K
描述
Silicon Controlled Rectifier, 3600 V, GATE TURN-OFF SCR

WG10036R23 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.83其他特性:PEAK TURN-OFF CURRENT IS 1000A
配置:SINGLEJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
断态重复峰值电压:3600 V重复峰值反向电压:2300 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:GATE TURN-OFF SCR

WG10036R23 数据手册

  

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Silicon Controlled Rectifier, 3600 V, GATE TURN-OFF SCR
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WG10036R26 IXYS

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Gate Turn-Off SCR, 3600V V(DRM), 2600V V(RRM), 1 Element
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WG10036R29 IXYS

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Silicon Controlled Rectifier, 3600 V, GATE TURN-OFF SCR
WG10036R30 IXYS

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Silicon Controlled Rectifier, 3600 V, GATE TURN-OFF SCR
WG10036R31 IXYS

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Gate Turn-Off SCR, 3600V V(DRM), 3100V V(RRM), 1 Element
WG10036R32 IXYS

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Gate Turn-Off SCR, 3600V V(DRM), 3200V V(RRM), 1 Element
WG10036R33 IXYS

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Gate Turn-Off SCR, 3600V V(DRM), 3300V V(RRM), 1 Element
WG10036R36 IXYS

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Symmetrical GTO SCR, 1180A I(T)RMS, 3600V V(DRM), 200V V(RRM), 1 Element