Datasheet > 存储 > DRAM> WED416S8030A10SI

WED416S8030A10SI

更新时间： 2024-10-01 03:54:59

品牌	Logo	应用领域
WEDC		存储内存集成电路光电二极管动态存储器时钟
页数	文件大小	规格书
12页	164K
描述
2Mx16x 4 Banks Synchronous DRAM

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中文翻译

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WED416S8030A10SI 数据手册

WED416S8030A-SI

White Electronic Designs

2Mx16x 4 Banks Synchronous DRAM

FEATURES

DESCRIPTION

ꢀ

Single 3.3V power supply

The WED416S8030AxxSI is 134,217,728 bits of

synchronous high data rate DRAM organized as 4 x

2,097, 152 words x 16 bits. Synchronous design allows

precise cycle control with the use of system clock, I/O

transactions are possible on every clock cycle. Range of

operating frequencies, programmable burst lengths and

programmable latencies allow the same device to be useful

for a variety of high bandwidth, high performance memory

system applications.

Fully Synchronous to positive Clock Edge

SDRAM CAS Latentency = 3 (100MHz), 2 (83MHz)

Burst Operation

• Sequential or Interleave

• Burst length = programmable 1,2,4,8 or full page

• Burst Read and Write

• Multiple Burst Read and Single Write

DATA Mask Control per byte

Available in a 54 pin TSOP type II package the

WED416S4030AxxSI is tested over the industrial temp

range (-40°C to +85°C) providing a solution for rugged

main memory applications.

ꢀ

Auto Refresh (CBR) and Self Refresh

• 4096 refresh cycles across 64ms

Automatic and Controlled Precharge Commands

Suspend Mode and Power Down Mode

ꢀ

PIN CONFIGURATIONS

PIN DESCRIPTION

CLK

Clock Input

CKE

Clock Enable

VCC

DQ0

VCCQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VCCQ

DQ5

DQ6

VSSQ

DQ7

VCC

V^SS

RAS#

CAS#

WE#

Row Address Strobe

Column Address Strobe

Write Enable

Chip Select

Address Inputs

Bank Select Address

Data Input/Output

Data Input/Output Mask

Power (+3.3V 10ꢀ)

Data Output Power

Ground

DQ15

VSSQ

DQ14

DQ13

VCCQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VCCQ

DQ8

VSS

CE#

A0-A11

BA0, BA1

DQ0-DQ15

L(U)DQM

V_CC

V_CCQ

V_SS

V_SSQ

LDQM

WE#

CAS#

RAS#

CE#

BA⁰

NC/RFU

UDQM

Data Output Ground

No Connection

CKE

A¹¹

BA1

A10/AP

A⁰

VCC

VSS

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

October 2004

Rev. 4

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...12

中文翻译

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与WED416S8030A10SI相关器件

型号	品牌	获取价格	描述	数据表
WED416S8030A12SI	WEDC	获取价格	2Mx16x 4 Banks Synchronous DRAM
WED416S8030A-SI	ETC	获取价格	Industrial SDRAM
WED48S8030E	WEDC	获取价格	2M x 8 Bits x 4 Banks Synchronous DRAM
WED48S8030E10SI	WEDC	获取价格	2M x 8 Bits x 4 Banks Synchronous DRAM
WED48S8030E8SI	WEDC	获取价格	2M x 8 Bits x 4 Banks Synchronous DRAM
WED7F112IDE33ADC25	WEDC	获取价格	Flash Module, 7MX16, SO-DIMM-144
WED7F112IDE36ADC25	WEDC	获取价格	Flash Module, 7MX16, SO-DIMM-144
WED7F128IDE36ADC25	WEDC	获取价格	Flash Module, 8MX16, SO-DIMM-144
WED7F144IDE33ADC25	WEDC	获取价格	Flash Module, 9MX16, SO-DIMM-144
WED7F144IDE36ADC25	WEDC	获取价格	Flash Module, 9MX16, SO-DIMM-144

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