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WED48S8030E PDF预览

WED48S8030E

更新时间: 2024-10-01 03:54:59
品牌 Logo 应用领域
WEDC 动态存储器
页数 文件大小 规格书
26页 1136K
描述
2M x 8 Bits x 4 Banks Synchronous DRAM

WED48S8030E 数据手册

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WED48S8030E  
White Electronic Designs  
2M x 8 Bits x 4 Banks Synchronous DRAM  
FEATURES  
DESCRIPTION  
Single 3.3V power supply  
The WED48S8030E is 67,108,864 bits of synchronous high  
data rate DRAM organized as 4 x 2,097,152 words x 8 bits.  
Synchronous design allows precise cycle control with the  
use of system clock, I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst lengths and programmable latencies allow the same  
device to be useful for a variety of high bandwidth, high  
performance memory system applications.  
Fully Synchronous to positive Clock Edge  
Clock Frequency = 125, 100MHz  
SDRAM CAS# Latency = 2  
Burst Operation  
•Sequential or Interleave  
•Burst length = programmable 1,2,4,8 or full page  
•Burst Read and Write  
Available in a 54 pin TSOP type II package the  
WED48S8030E is tested over the industrial temp range (-  
40C to +85C) providing a solution for rugged main memory  
applications.  
•Multiple Burst Read and Single Write  
DATA Mask Control  
Auto Refresh (CBR) and Self Refresh  
•4096 refresh cycles across 64ms  
Automatic and Controlled Precharge Commands  
Suspend Mode and Power Down Mode  
Industrial Temperature Range  
FIG. 1  
Pin Description  
Pin Configuration  
A
0-11  
Address Inputs  
Bank Select Addresses  
Chip Select  
VCC  
1
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
VSS  
BA0  
, BA  
1
DQ0  
2
DQ7  
VCCQ  
3
VSSQ  
CE#  
WE#  
CK  
NC  
4
NC  
DQ6  
DQ1  
5
Write Enable  
V
SSQ  
6
VCCQ  
NC  
DQ2  
7
NC  
DQ5  
Clock Input  
8
VCCQ  
9
VSSQ  
CKE  
DQ0-7  
DQM  
RAS#  
CAS#  
Clock Enable  
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
NC  
DQ4  
DQ3  
Data Input/Output  
Data Input/Output Mask  
Row Address Strobe  
Column Address Strobe  
Power (3.3V)  
V
SSQ  
VCCQ  
NC  
NC  
VCC  
VSS  
NC  
NC/RFU  
DQM  
CK  
WE#  
CAS#  
RAS#  
CE#  
BA0  
BA1  
10/AP  
A0  
CKE  
NC  
A11  
A9  
V
CC  
V
CCQ  
Data Output Power  
Ground  
A
A8  
A7  
V
SS  
A1  
A6  
A2  
A5  
V
SSQ  
Data Output Ground  
No Connection  
A3  
A4  
VCC  
VSS  
NC  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
February, 2002  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
Rev. 2  

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