Datasheet > WED416S16030A7SI

WED416S16030A7SI

更新时间： 2024-10-01 19:58:15

品牌	Logo	应用领域
WEDC		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
26页	398K
描述
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54

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WED416S16030A7SI 数据手册

WED416S16030A

White Electronic Designs

4M x 16 Bits x 4 Banks Synchronous DRAM

FEATURES

DESCRIPTION

■ Single 3(3V power supply

■ Fully Synchronous to positive Clock Edge

■ Clock Frequency = 133, 125, and 100MHz

■ SDRAM CAS Latency = 2

■ Burst Operation

The WED416S16030A is 268,435,456 bits of synchro-

nous high data rate DRAM organized as 4 x 4,196,304

words x 16 bits( Synchronous design allows precise

cycle control with the use of system clock( I/O transac-

tions are possible on every clock cycle( Range of oper-

ating frequencies, programmable burst lengths and pro-

grammable latencies allow the same device to be use-

ful for a variety of high bandwidth, high performance

memory system applications(

Sequential or Interleave

Burst length = programmable 1,2,4,8 or full page

Burst Read and Write

Available in a 54 pin TSOP type II package the

WED416S16030A is tested over the industrial temp

range ꢀ-40°C to +85°C) providing a solution for rugged

main memory applications(

Multiple Burst Read and Single Write

■ DATA Mask Control per byte

■ Auto Refresh ꢀCBR) and Self Refresh

8192 refresh cycles across 64ms

■ Automatic and Controlled Precharge Commands

■ Suspend Mode and Power Down Mode

■ Industrial Temperature Range

FIGꢀ 1

PIN DESCRIPTION

PIN CONFIGURATION

A0-12

Address Inputs

DQ15

SSQ

BA0, BA1 Bank Select Addresses

DDQ

Chip Select

DQ14

DQ13

Write Enable

Clock Input

SSQ

VDDQ

DQ12

DQ11

CLK

DDQ

SSQ

DQ10

CKE

DQ0-15

Clock Enable

Data Input/Output

SSQ

VDDQ

L(U)DQM Data Input/Output Mask

DQ8

VSS

RAS

CAS

VDD

Row Address Strobe

Column Address Strobe

Power (3*3V)

LDQM

CAS

RAS

10/AP

NC/RFU

UDQM

CLK

CKE

VDDQ

VSS

Data Output Power

Ground

VSSQ

Data Output Ground

No Connection

White Electronic Designs Corporation (508) 366-5151 wwwꢀwhiteedcꢀcom

June 2002 Revꢀ 0

ECO #15332

12 3 4 5 6 7...26

中文翻译

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与WED416S16030A7SI相关器件

型号	品牌	获取价格	描述	数据表
WED416S16030A8SI	WEDC	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, TSOP2-54
WED416S16030C10SI	WEDC	获取价格	4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S16030C75SI	WEDC	获取价格	4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S16030C7SI	WEDC	获取价格	4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S16030C8SI	WEDC	获取价格	4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S8030A	WEDC	获取价格	2Mx16x 4 Banks Synchronous DRAM
WED416S8030A10SI	WEDC	获取价格	2Mx16x 4 Banks Synchronous DRAM
WED416S8030A12SI	WEDC	获取价格	2Mx16x 4 Banks Synchronous DRAM
WED416S8030A-SI	ETC	获取价格	Industrial SDRAM
WED48S8030E	WEDC	获取价格	2M x 8 Bits x 4 Banks Synchronous DRAM

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