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W764M32VESSBI PDF预览

W764M32VESSBI

更新时间: 2024-01-13 00:16:12
品牌 Logo 应用领域
WEDC 闪存
页数 文件大小 规格书
16页 505K
描述
64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory

W764M32VESSBI 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:BGA, BGA107,9X12,40Reach Compliance Code:compliant
风险等级:5.8其他特性:512,256 SECTOR OF 64K WORD ARE ALSO AVAILABLE
通用闪存接口:YES数据轮询:YES
数据保留时间-最小值:20JESD-30 代码:R-PBGA-B107
长度:17.1 mm内存密度:2147483648 bit
内存集成电路类型:FLASH内存宽度:32
功能数量:1端子数量:107
字数:67108864 words字数代码:64000000
工作模式:ASYNCHRONOUS组织:64MX32
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA107,9X12,40封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
编程电压:3 V就绪/忙碌:YES
座面最大高度:3.11 mm最大待机电流:0.00002 A
最大压摆率:0.32 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:14.1 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

W764M32VESSBI 数据手册

 浏览型号W764M32VESSBI的Datasheet PDF文件第1页浏览型号W764M32VESSBI的Datasheet PDF文件第2页浏览型号W764M32VESSBI的Datasheet PDF文件第3页浏览型号W764M32VESSBI的Datasheet PDF文件第5页浏览型号W764M32VESSBI的Datasheet PDF文件第6页浏览型号W764M32VESSBI的Datasheet PDF文件第7页 
W764M32V-XSBX  
White Electronic Designs  
ADVANCED*  
CAPACITANCE  
ABSOLUTE MAXIMUM RATINGS  
TA = +25°C, F = 1.0MHz  
Parameter  
Unit  
°C  
V
V
°C  
Parameter  
Symbol  
CWE  
CCS  
Max  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
Operating Temperature  
Supply Voltage Range (VCC)  
Signal Voltage Range  
Storage Temperature Range  
Endurance (write/erase cycles)  
NOTES:  
-55 to +125  
-0.5 to +4.0  
-0.5 to Vcc +0.5  
-55 to +125  
WE1-4# capacitance  
CS1-4# capacitance  
Data I/O capacitance  
CI/O  
Address input capacitance  
RESET# capacitance  
RY/BY# capacitance  
OE# capacitance  
CAD  
CRS  
CRB  
COE  
1,000,000 min.  
cycles  
1. Minimum DC voltage on input or input or I/Os is -0.5V. During voltage transitions,  
inputs or I/Os may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC  
voltage on input or I/Os us VCC + 0.5V. During voltage transitions, input or I/O pins  
may overshoot to VCC + 2.0V for periods up to 20ns  
This parameter is guaranteed by design but not tested.  
2. Minimum DC input voltage on pins A9, OE#, and ACC is 0.5V. During voltage  
transitions, A9, OE#, and ACC may overshoot VSS to -2.0V for periods of up to 20ns.  
Maximum DC input voltage on pin A9, OE#, and ACC is +12.5V which may overshoot  
to +14.0V for periods up to 20ns  
3. No more than one output may be shorted to ground at a time. Duration of the short  
circuit should not be greater than one second.  
4. Stresses above those listed under Absolute Maxium Ratings may cause permanent  
damage to the device. This is a stress rating only; functional operation of the device  
at these or any other conditions above those indicated in the operational sections  
of the data sheet is not implied. Exposure of the device to absolute maxium rating  
conditons for extended peroids may affect device reliability  
DATA RETENTION  
Parameter  
Test Conditions  
150°C  
Min  
10  
Unit  
Years  
Years  
Pattern Data  
Retention Time  
125°C  
20  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Supply Voltage  
Operating Temp. (Mil.)  
Operating Temp. (Ind.)  
Symbol  
VCC  
TA  
Min  
3.0  
-55  
-40  
Max  
3.6  
+125  
+85  
Unit  
V
°C  
°C  
TA  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 2  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  

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