Datasheet > W764M32VESSBI

W764M32VESSBI

更新时间： 2024-01-04 05:52:01

品牌	Logo	应用领域
WEDC		闪存
页数	文件大小	规格书
16页	505K
描述
64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory

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W764M32VESSBI 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	BGA, BGA107,9X12,40	Reach Compliance Code：	compliant
风险等级：	5.8	其他特性：	512,256 SECTOR OF 64K WORD ARE ALSO AVAILABLE
通用闪存接口：	YES	数据轮询：	YES
数据保留时间-最小值：	20	JESD-30 代码：	R-PBGA-B107
长度：	17.1 mm	内存密度：	2147483648 bit
内存集成电路类型：	FLASH	内存宽度：	32
功能数量：	1	端子数量：	107
字数：	67108864 words	字数代码：	64000000
工作模式：	ASYNCHRONOUS	组织：	64MX32
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装等效代码：	BGA107,9X12,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
编程电压：	3 V	就绪/忙碌：	YES
座面最大高度：	3.11 mm	最大待机电流：	0.00002 A
最大压摆率：	0.32 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	切换位：	YES
类型：	NOR TYPE	宽度：	14.1 mm
写保护：	HARDWARE/SOFTWARE	Base Number Matches：	1

W764M32VESSBI 数据手册

W764M32V-XSBX

White Electronic Designs

ADVANCED*

GENERAL DESCRIPTION

Sector Protection prevents unauthorized write and erase

operations in any combination of sectors through a user-

deﬁned 64-bit password.

The W764MB2V-XSBX device is a 3.0V single power

flash memory. The device utilizes four organized as

33,554,432 words or 67, 108,864 bytes. The device has

64 -bit wide data bus that can also function as an 32-bit

wide data bus by using the BYTE# input. The device can

be programmed either in the host system or in standard

EPROM programmers.

The erase Suspend / Erase Resume feature allows the host

system to pause and erase operation in a given sector to

read or program any other sector and then complete the

erase operation. The Program Suspend / Program Resume

feature enables the host system to pause the program

operation in a given sector to read any other sector and

then complete the program operation.

Each device requires a single 3.0 volt power supply for

both read and write functions. In addition to a V_CCinput, an

high-voltage accelerated program (WP /ACC) input provides

shorter programming times through increased current. This

feature is intended to facilitate factory throughput during

system production, but may also be used in the ﬁeld if

desired.

The hardware RESET# pin terminates any operation in

progress and resets the device, after which it is then ready

for a new operation. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the host system to read boot-up

ﬁrmware from the Flash memory device.

The devices are entirely command set compatible with the

JEDEC single power-supply Flash standard. Commands

are written to the device using standard microprocessor write

timing. Write cycles also internally latch addresses and data

needed for the programming and erase operations.

The device reduces power consumption in the standby

mode when it detects speciﬁc voltage levels on CS# and

RESET#, or when addresses have been stable for a

speciﬁed period of time.

The sector erase architecture allows memory sectors to

be erased and reprogrammed without affecting the data

contents of other sectors. The device is fully erased when

shipped from the factory.

The Secured Silicon Sector provides a 128-work/256-byte

area for code or data that can be permanently protected.

Once this sector is protected, no further changes within the

sector can occur.

Device programming and erasure are initiated through

command sequences. Once a program or erase operation

has begun, the host system need only poll the DQ7 (Data#

Polling) or DQ6 (toggle) status bits or monitor the Ready /

Busy# (RY / BY#) output to determine whether the operation

is complete. To facilitate programming, an Unlock Bypass

mode reduces command sequence over head by requiring

only two write cycles to program data instead of four.

The Write Protect (WP# / ACC) feature protects the ﬁrst or

last sector by asserting a logic low on the WP# pin.

The I/O (V_IO) control allows the host system to set the

voltage levels that the device generates and tolerates on

all input levels (address, chip control, and DQ input levels)

to the same voltage level that is asserted on the V_IOpin.

This allows the device to operate in a 1.8 V or 3 V system

environment as required.

Hardware data protection measures include a low V_CC

detector that automatically inhibits write operations during

power transitions. Persistent Sector Protection provides

in-system, comand-enabled protection of any combination

of sectors using a single power supply at V_CC. Password

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 2

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

123 4 5 6 7...16

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与W764M32VESSBI相关器件

型号	品牌	描述	获取价格	数据表
W764M32VESSBM	WEDC	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory	获取价格
W764M32V-XSBX	WEDC	64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory	获取价格
W7675ZC020	LITTELFUSE	Rectifier Diode, 1 Phase, 1 Element, 7680A, 200V V(RRM), Silicon,	获取价格
W7675ZC080	LITTELFUSE	DIODE 7680 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode	获取价格
W7675ZC100	LITTELFUSE	Rectifier Diode, 1 Phase, 1 Element, 7680A, 1000V V(RRM), Silicon,	获取价格
W7675ZC120	LITTELFUSE	Rectifier Diode, 1 Phase, 1 Element, 7680A, 1200V V(RRM), Silicon,	获取价格

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