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VT6X11T2R PDF预览

VT6X11T2R

更新时间: 2024-01-08 14:12:24
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管晶体管
页数 文件大小 规格书
3页 179K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, VMT6, 6 PIN

VT6X11T2R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:13 weeks
风险等级:1.75Samacsys Description:Bipolar Transistors - BJT NPN+NPN 20VCEO 0.2A VMT6
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:20 V
配置:CURRENT MIRROR最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-F6JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):400 MHzBase Number Matches:1

VT6X11T2R 数据手册

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which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
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The Products specified in this document are intended to be used with general-use electronic  
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