Datasheet > VS-VSKD196/04PBF

VS-VSKD196/04PBF

更新时间： 2024-02-07 23:13:42

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
13页	271K
描述
RECTIFIER DIODE

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技术参数
数据手册

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VS-VSKD196/04PBF 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	18 weeks
风险等级：	5.74	二极管类型：	RECTIFIER DIODE
湿度敏感等级：	NOT SPECIFIED	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

VS-VSKD196/04PBF 数据手册

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

www.vishay.com

Vishay Semiconductors

4500

4000

3500

3000

2500

2000

1500

1000

5000

At any rated load condition and with

rated V_RRMapplied following surge.

Initial T_J= 150 °C

Maximum non-repetitive surge current

versus pulse train duration.

Initial T_J= 150 °C

4500

4000

3500

3000

2500

2000

1500

1000

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

No voltage reapplied

Rated V_RRMreapplied

VSK.196.. Series

100

0.01

0.1

1.0

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Pulse Train Duration (s)

Fig. 14 - Maximum Non-Repetitive Surge Current

Fig. 15 - Maximum Non-Repetitive Surge Current

350

300

250

200

150

100

300

250

200

150

100

VSK.196.. Series

Per junction

T_J= 150 °C

100

150

200

250

300

100

125

150

Total RMS Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 16 - On-State Power Loss Characteristics

1200

1000

800

600

400

200

1200

1000

800

180°

(Sine)

180°

(Rect)

600

400

2 x VSK.196.. Series

Single phase bridge

Connected

200

T_J= 150 °C

125

100

200

300

400

100

150

Maximum Allowable Ambient Temperature (°C)

Total Output Current (A)

Fig. 17 - On-State Power Loss Characteristics

Revision: 10-Apr-14

Document Number: 94357

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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