Datasheet > VS-VSKCS209

VS-VSKCS209

更新时间： 2022-02-26 14:20:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	875K
描述
High frequency operation

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中文翻译

获取价格

数据手册

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VS-VSKCS209 数据手册

VS-VSKCS209/150

Vishay Semiconductors

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

200

UNITS

per module

per leg

Maximum average

forward current

I_F(AV)

50 % duty cycle at T_C= 113 °C, rectangular waveform

100

Following any rated

load conditionand with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

11 300

Maximum peak one cycle

non-repetitive surge current

I_FSM

10 ms sine or 6 ms rect. pulse

1600

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.8 A, L = 10 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

1.01

1.35

0.85

1.13

UNITS

100 A

T_J= 25 °C

200 A

Maximum forward voltage drop

V_FM

100 A

T_J= 125 °C

200 A

T_J= 25 °C

Maximum reverse leakage current

I_RM

_R= Rated V_R

T_J= 125 °C

Maximum junction capacitance

Typical series inductance

C_T

L_S

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

3000

7.0

Maximum voltage rate of change

dV/dt

10 000

V/μs

3000 (1 min)

3600 (1 s)

Maximum RMS insulation voltage

V_INS

50 Hz

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage 

temperature range

T_J, T_Stg

-55 to +175

°C

Maximum thermal resistance, 

junction to case per leg

R_thJC

R_thCS

DC operation

0.52

0.1

°C/W

Typical thermal resistance, 

case to heatsink per module

Approximate weight

2.7

oz.

A mounting compound is recommended and the torque

should be rechecked after a period of 3 hours to allow for

the spread of the compound.

to heatsink

busbar

Mounting torque 10 %

Case style

JEDEC^®

TO-240AA compatible

Revision: 28-Sep-15

Document Number: 93229

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

123 4 5 6

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与VS-VSKCS209相关器件

型号	品牌	获取价格	描述	数据表
VS-VSKCS209/150	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150V V(RRM), Silicon, TO-240AA COMPATIBLE,
VS-VSKCS220	VISHAY	获取价格	Low forward voltage drop
VS-VSKCS220/030	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, TO-240AA COMPATIBLE, 3
VS-VSKCS400	VISHAY	获取价格	High frequency operation
VS-VSKCS400/045	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, TO-240AA COMPATIBLE, 3
VS-VSKCS401	VISHAY	获取价格	High frequency operation
VS-VSKCS401/045	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, TO-240AA COMPATIBLE, 3
VS-VSKCS403	VISHAY	获取价格	Low forward voltage drop
VS-VSKCS403/100	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, TO-240AA COMPATIBLE,
VS-VSKCS408	VISHAY	获取价格	Low forward voltage drop

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