Datasheet > VS-ENK025C65S

VS-ENK025C65S

更新时间： 2023-12-06 20:09:19

品牌	Logo	应用领域
威世 - VISHAY		功率因数校正
页数	文件大小	规格书
13页	532K
描述
EMIPAK 1B PressFit Power Module 650 V PFC and Full Bridge MOSFET, 25 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-ENK025C65S 数据手册

VS-ENK025C65S

Vishay Semiconductors

www.vishay.com

EMIPAK 1B PressFit Power Module

650 V PFC and Full Bridge MOSFET, 25 A

FEATURES

• E series power MOSFET with fast body diode

• SiC diode technology

• Exposed Al₂O₃substrate with low thermal

resistance

• Low input capacitance

• Low switching and conduction losses

• Low figure-of-merit (FOM) R_onx Q_g

• Ultra low gate charge Q_g

EMIPAK 1B

(package example)

• Low internal inductances

PRIMARY CHARACTERISTICS

QB1 - QB2 PFC MOSFET

V_DSS

• Qualified using AQG324 guideline as reference

• PressFit pins locking technology

PATENT(S): www.vishay.com/patents

650 V

59 m

25 A

_DS(on)typical at I_C= 25 A

_Dat T_SINK= 65 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Q1 to Q4 FULL BRIDGE MOSFET

V_DSS

_DS(on)typical at I_C= 25 A

650 V

59 m

25 A

DESCRIPTION

The EMIPAK 1B package is easy to use thanks to the

PressFit pins. The exposed substrate provides improved

thermal performance.

I_Dat T_SINK= 65 °C

DB1 - DB2 SILICON CARBIDE CLAMP DIODE

V_RRM

650 V

1.52 V

The optimized layout also helps to minimize stray

parameters, allowing for better EMI performance.

_FMtypical at 12 A



I_Fat T_SINK= 69 °C

Package

12 A

EMIPAK 1B

MOSFET dual boost PFC and

MOSFET full bridge inverter

Circuit configuration

Type

Modules - MOSFET

ABSOLUTE MAXIMUM RATINGS (T_J= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

150

UNITS

Operating junction temperature

Storage temperature range

RMS isolation voltage

QB1 - QB2 PFC MOSFET

Drain to source voltage

Gate to source voltage

Pulsed drain current

T_J

°C

T_Stg

-40 to +150

3500

V_ISOL

T_J= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s

V_DSS

V_GS

I_DM

650

T_SINK= 25 °C

Continuous drain current

Power dissipation

I_D

T_SINK= 80 °C

T_SINK= 25 °C

139

P_D

T_SINK= 80 °C

Single pulse avalanche energy

E_AS

I_SM

L = 10 mH, I_AS= 16 A, T_J= 25 °C

1280

225

Pulsed source current (body diode)

PATENT(S): www.vishay.com/patents

This Vishay product is protected by one or more United States and International patents.

Revision: 02-Aug-2022

Document Number: 96860

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

下载PDF

与VS-ENK025C65S相关器件

型号	品牌	描述	获取价格	数据表
VS-ENM040M60P	VISHAY	EMIPAK 1B PressFit Power Module 800 V Half Controlled Single Phase Bridge, 20 A 600 V PFC	获取价格
VS-ENV020F65U	VISHAY	EMIPAK 1B PressFit Power Module 650 V HF Output Rectification With Flexible Configuration,	获取价格
VS-ENV020M120M	VISHAY	EMIPAK 1B PressFit Power Module 1200 V AC Line Input Rectification With Flexible Configura	获取价格
VS-ENW30S120T	VISHAY	EMIPAK 1B PressFit Power Module, 1200 V Silicon Carbide Single Phase Bridge, 30 A	获取价格
VS-ENY050C60	VISHAY	EMIPAK 1B PressFit Power Module 600 V Full Bridge MOSFET, 50 A	获取价格
VS-ENZ025C60N	VISHAY	EMIPAK 1B PressFit Power Module Double PFC MOSFET, 25 A	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-ENK025C65S

VS-ENK025C65S 数据手册

与VS-ENK025C65S相关器件

与VS-ENK025C65S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-ENK025C65S

VS-ENK025C65S 数据手册

与VS-ENK025C65S相关器件

与VS-ENK025C65S相关文章

您还可以找

您在本页遇到什么问题？