VS-EPH3006LHN3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Hyperfast soft recovery time
• 175 °C operating junction temperature
2
1
• Designed and qualified according to
commercial qualification
3
• AEC-Q101 qualified, meets JESD 201, class 1A whisker
test
TO-247AD 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base cathode
2
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
3
1
Anode
Cathode
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRIMARY CHARACTERISTICS
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
IF(AV)
30 A
600 V
VR
VF at IF
1.4 V
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
t
rr typ.
26 ns
TJ max.
Package
175 °C
TO-247AD 2L
Single
Circuit configuration
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
MAX.
600
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V
IF(AV)
TC = 112 °C
TC = 25 °C, tp = 8.3 ms half sine wave
30
A
IFSM
240
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
VBR
VR
,
IR = 100 μA
IF = 30 A
600
-
-
blocking voltage
V
-
-
-
-
-
-
2.0
1.4
0.02
-
2.65
1.8
30
300
-
Forward voltage
VF
IR
IF = 30 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
20
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 27-Nov-2018
Document Number: 95781
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000