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VS-80SQ030TR

更新时间： 2024-01-12 13:27:48
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 143K
描述
DIODE 8 A, 30 V, SILICON, RECTIFIER DIODE, DO-204AR, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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VS-80SQ030TR 技术参数

生命周期：Obsolete零件包装代码：DO-204
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.82
Is Samacsys：N其他特性：FREE WHEELING DIODE, HIGH RELIABILITY
应用：GENERAL PURPOSE外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-204AR
JESD-30 代码：O-PALF-W2最大非重复峰值正向电流：2400 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM最大重复峰值反向电压：30 V
表面贴装：NO技术：SCHOTTKY
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

VS-80SQ030TR 数据手册

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VS-80SQ... Series, VS-80SQ...-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 8 A  
FEATURES  
• 175 °C TJ operation  
• Low forward voltage drop  
Cathode  
Anode  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
DO-204AR  
• Guard ring for enhanced ruggedness and  
long term reliability  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for commercial level  
PRODUCT SUMMARY  
Package  
DO-204AR  
8 A  
IF(AV)  
• Halogen-free according to IEC 61249-2-21 definition  
(-M3 only)  
VR  
30 V, 35 V, 40 V, 45 V  
0.44 V  
VF at IF  
DESCRIPTION  
I
RM max.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
The VS-80SQ... axial leaded Schottky rectifier series has  
been optimized for low reverse leakage at high temperature.  
The proprietary barrier technology allows for reliable  
operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
Single die  
10 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
8
UNITS  
A
V
30 to 45  
2400  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C  
Range  
0.44  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-80SQ030  
VS-80SQ030-M3  
VS-80SQ035  
VS-80SQ035-M3  
VS-80SQ040  
VS-80SQ040-M3  
VS-80SQ045  
VS-80SQ045-M3  
SYMBOL  
VR  
UNITS  
Maximum DC reverse voltage  
30  
35  
40  
45  
V
Maximum working peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 119 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
8
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
2400  
Followinganyratedload  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
380  
10  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.6 A, L = 7.8 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.6  
Revision: 19-Sep-11  
Document Number: 93398  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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