5秒后页面跳转
VP0106N3-GP003 PDF预览

VP0106N3-GP003

更新时间: 2024-01-24 16:04:06
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
5页 633K
描述
Small Signal Field-Effect Transistor,

VP0106N3-GP003 数据手册

 浏览型号VP0106N3-GP003的Datasheet PDF文件第1页浏览型号VP0106N3-GP003的Datasheet PDF文件第2页浏览型号VP0106N3-GP003的Datasheet PDF文件第4页浏览型号VP0106N3-GP003的Datasheet PDF文件第5页 
VP0106  
Typical Performance Curves  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
50  
40  
30  
20  
10  
0
1.10  
VGS = -5.0V  
1.06  
1.02  
0.98  
0.94  
0.90  
VGS = -10V  
0
-0.3  
-0.6  
-0.9  
-1.2  
-1.5  
-50  
0
50  
100  
150  
Tj (OC)  
ID (amperes)  
V(th) and RDS Variation with Temperature  
Transfer Characteristics  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
-1.6  
TA = -55OC  
-1.6  
RDS(ON) @ 10V, -0.5A  
VDS = -25V  
TA = 25OC  
-1.4  
RDS(ON) @ -5V, -0.1A  
-1.4  
-1.2  
-1.2  
-1.0  
-1.0  
-0.8  
TA = 125OC  
V(th) @ -1.0mA  
-0.8  
0.6  
-50  
0
-2  
-4  
-6  
-8  
-10  
0
50  
100  
150  
VGS (volts)  
Tj (OC)  
Capacitance vs. Drain-to-Source Voltage  
Gate Drive Dynamic Characteristics  
-10  
100  
f = 1MHz  
VDS = -10V  
70pf  
-8  
-6  
-4  
-2  
0
75  
VDS = -40V  
50  
70pf  
CISS  
25  
45pf  
COSS  
CRSS  
0
0
-10  
-20  
-30  
-40  
0
0.2  
0.4  
0.6  
0.8  
1.0  
QG (nanocoulombs)  
VDS (volts)  
Doc.# DSFP-VP0106  
C082313  
Supertex inc.  
www.supertex.com  
3

与VP0106N3-GP003相关器件

型号 品牌 描述 获取价格 数据表
VP0106N3-GP005 MICROCHIP SMALL SIGNAL, FET

获取价格

VP0106N3-GP005 SUPERTEX P-Channel Enhancement-Mode Vertical DMOS FETs

获取价格

VP0106N3-GP013 MICROCHIP Small Signal Field-Effect Transistor,

获取价格

VP0106N3-GP013 SUPERTEX P-Channel Enhancement-Mode Vertical DMOS FETs

获取价格

VP0106N3-GP014 MICROCHIP SMALL SIGNAL, FET

获取价格

VP0106N3-GP014 SUPERTEX P-Channel Enhancement-Mode Vertical DMOS FETs

获取价格