Datasheet > VN1504

VN1504

更新时间： 2024-02-17 01:03:03

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	336K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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技术参数
数据手册

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VN1504 技术参数

生命周期：	Active	包装说明：	UNCASED CHIP, X-XUUC-N
Reach Compliance Code：	compliant	风险等级：	5.38
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	40 V
最大漏源导通电阻：	3 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	X-XUUC-N	JESD-609代码：	e0
元件数量：	1	工作模式：	DEPLETION MODE
封装主体材料：	UNSPECIFIED	封装形状：	UNSPECIFIED
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	NO LEAD	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

VN1504 数据手册

VN1504/ VN1506/ VN1509

N-Channel Enhancement-Mode

Vertical DMOS FET

Ordering Information

Order Number / Package

Die^†

BV_DSS

R_DS(ON)

I_D(ON)

BV_DGS

(max)

(min)

40V

60V

90V

3.0Ω

2.0A

VN1504NW

VN1506NW

VN1509NW

†

MIL visual screening available.

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

Advanced DMOS Technology

Thisi enhancement-mode (normally-off) transistori utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

20V

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

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与VN1504相关器件

型号	品牌	描述	获取价格	数据表
VN1504NW	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FET	获取价格
VN1506	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FET	获取价格
VN1506ND	SUPERTEX	暂无描述	获取价格
VN1506NW	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FET	获取价格
VN1509ND	SUPERTEX	Power Field-Effect Transistor, 90V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semic	获取价格
VN1509NJ	SUPERTEX	Power Field-Effect Transistor, 90V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semic	获取价格