Datasheet > VN0550

VN0550

更新时间： 2023-12-06 19:52:29

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	900K
描述
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-prove

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数据手册

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VN0550 数据手册

VN0550

100

1.1

1.0

0.9

V_GS= 5.0V

V_GS= 10V

-50

100

150

0.1

0.2

0.3

0.4

0.5

T_j(^OC)

I_D(amperes)

FIGURE 2-7:

Variation with

FIGURE 2-10:

On-Resistance vs. Drain

DSS

Temperature.

Current.

0.5

V_DS= 25V

1.4

1.2

1.0

0.8

1.8

R_DS(ON)@ 10V, 50mA

0.4

0.3

0.2

0.1

T_A= -55^OC

25^OC

1.4

1.0

150^OC

V_(th)@ 1.0mA

0.6

-50

0.2

100

150

2.0

4.0

6.0

8.0

T_j(^OC)

V_GS(volts)

FIGURE 2-8:

Transfer Characteristics.

FIGURE 2-11:

and R Variation with

(th) DS

Temperature.

100

_DS= 10V

f = 1MHz

8.0

6.0

4.0

2.0

105 pF

V_DS= 40V

112 pF

C_ISS

50 pF

C_OSS

C_RSS

0.2

0.4

0.6

0.8

1.0

V_DS(volts)

Q_G(nanocoulombs)

FIGURE 2-9:

Capacitance vs.

FIGURE 2-12:

Gate Drive Dynamic

Drain-to-Source Voltage.

Characteristics.

 2018 Microchip Technology Inc.

DS20005978A-page 5

1 2 3 456 7 8...14

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