Datasheet > VI60100C-E3/P

VI60100C-E3/P

更新时间： 2024-02-15 12:06:23

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	159K
描述
Rectifier Diode,

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技术参数
数据手册

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VI60100C-E3/P 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.76	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

VI60100C-E3/P 数据手册

V60100C-E3, VI60100C-E3, VB60100C-E3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.36 V at I_F= 5 A

FEATURES

TO-220AB

TO-262AA

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C (for TO-263AB

package)

• Low thermal resistance

V60100C

VI60100C

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB and TO-262AA package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

VB60100C

PIN 1

PIN 2

MECHANICAL DATA

Case: TO-220AB, D²PAK (TO-263AB), and TO-262AA

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

ADDITIONAL RESOURCES

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

3D Models

E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

PRIMARY CHARACTERISTICS

Mounting Torque: 10 in-lbs maximum

I_F(AV)

2 x 30 A



V_RRM

100 V

I_FSM

320 A

0.66 V

150 °C

V_Fat I_F= 30 A

T_Jmax.



Package

TO-220AB, TO-262AA, D²PAK (TO-263AB)

Circuit configuration

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V60100C

VI60100C

VB60100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

E_AS

320

450

1.0

Non-repetitive avalanche energy at T_J= 25 °C, L = 140 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C 

per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 23-Sep-2019

Document Number: 88942

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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