New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.63 V at I = 3 A
F
F
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
3
3
2
2
1
1
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
V10150C
VF10150C
TO-262AA
PIN 1
PIN 3
PIN 1
PIN 3
PIN 2
PIN 2
CASE
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-263AB
K
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
1
3
2
1
MECHANICAL DATA
VB10150C
VI10150C
PIN 1
PIN 3
PIN 1
PIN 2
K
PIN 2
K
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
HEATSINK
Molding compound meets UL 94 V-0 flammability
rating
PRIMARY CHARACTERISTICS
Base P/N-E3 - RoHS compliant, commercial grade
IF(AV)
2 x 5.0 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
VRRM
150 V
60 A
IFSM
VF at IF = 5 A
TJ max.
0.69 V
150 °C
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL V10150C
VF10150C VB10150C VI10150C
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
per device
per diode
10
5.0
Maximum average forward rectified current (fig. 1)
IF(AV)
IFSM
EAS
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
60
23
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C 2 °C per diode
IRRM
dV/dt
0.5
10 000
A
V/µs
V
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 89068
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1