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VB20120SG PDF预览

VB20120SG

更新时间: 2022-12-16 16:12:01
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 166K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VB20120SG 数据手册

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New Product  
V20120SG, VF20120SG, VB20120SG & VI20120SG  
Vishay General Semiconductor  
High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.54 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
3
3
2
2
1
1
V20120SG  
TO-263AB  
VF20120SG  
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB  
and TO-262AA package)  
PIN 1  
PIN 3  
PIN 1  
PIN 2  
CASE  
PIN 2  
PIN 3  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-262AA  
K
K
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
A
3
NC  
2
1
VB20120SG  
VI20120SG  
MECHANICAL DATA  
PIN 1  
PIN 3  
NC  
A
K
PIN 2  
K
Case: TO-220AB, ITO-220AB, TO-263AB and  
HEATSINK  
TO-262AA  
PRIMARY CHARACTERISTICS  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
VRRM  
IFSM  
20 A  
120 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
VF at IF = 20 A  
TJ max.  
0.78 V  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL V20120SG  
VRRM  
IF(AV)  
VF20120SG VB20120SG VI20120SG UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
120  
20  
V
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
150  
A
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 88994  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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