New Product
V20120SG, VF20120SG, VB20120SG & VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.54 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AB
ITO-220AB
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
3
3
2
2
1
1
V20120SG
TO-263AB
VF20120SG
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
PIN 1
PIN 3
PIN 1
PIN 2
CASE
PIN 2
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
A
3
NC
2
1
VB20120SG
VI20120SG
MECHANICAL DATA
PIN 1
PIN 3
NC
A
K
PIN 2
K
Case: TO-220AB, ITO-220AB, TO-263AB and
HEATSINK
TO-262AA
PRIMARY CHARACTERISTICS
Epoxy meets UL 94V-0 flammability rating
IF(AV)
VRRM
IFSM
20 A
120 V
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF at IF = 20 A
TJ max.
0.78 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL V20120SG
VRRM
IF(AV)
VF20120SG VB20120SG VI20120SG UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
120
20
V
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 88994
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1