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V60MLA1210

更新时间： 2024-02-12 03:36:29
品牌 Logo 应用领域
力特 - LITTELFUSE 电阻器非线性电阻器
页数 文件大小 规格书
11页 194K
描述
Multilayer Transient Voltage Surge Suppressors

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中文翻译

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V60MLA1210 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：Chip / Die,Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8533.40.40.00
风险等级：5.37电路直流最大电压：60 V
电路RMS最大电压：50 V最大能量吸收容量：1.5 J
JESD-609代码：e4安装特点：SURFACE MOUNT
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C封装形状：RECTANGULAR PACKAGE
封装形式：Chip / Die包装方法：TR, PLASTIC, 13 INCH
额定功率耗散 (P)：0.15 W额定温度：150 °C
电阻器类型：VARISTOR子类别：Non-linear Resistors
表面贴装：YES技术：METAL OXIDE FILM
端子面层：SILVER PALLADIUM端子位置：DUAL ENDED
端子形状：WRAPAROUNDBase Number Matches：1

V60MLA1210 数据手册

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Next  
Previous  
Surface Mount Varistors  
Multilayer Transient Voltage Surge Suppressors  
ML Varistor Series  
100  
Device Characteristics  
At low current levels, the V-I curve of the multilayer transient voltage  
suppressor approaches a linear (ohmic) relationship and shows a  
temperature dependent effect (Figure 10). At or below the maximum  
working voltage, the suppressor is in a high resistance mode (approach-  
ing 106Ω at its maximum rated working voltage). Leakage currents at  
maximum rated voltage are below 50µA, typically 25µA; for 0402 size  
below 10µA, typically 5µA.  
V26MLA1206  
100%  
V5.5MLA1206  
10  
-60  
-40  
-20  
0
20  
TEMPERATURE ( C)  
FIGURE 12. CLAMPINGVOLTAGE OVER TEMPERATURE  
40  
60  
80  
100 120 140  
o
(V AT 10A)  
C
Energy Absorption/Peak Current Capability  
o
o
o
o
o
C
25 50 75  
-8 -7  
100 125  
10%  
1E  
Energy dissipated within the ML is calculated by multiplying the clamping  
voltage, transient current and transient duration. An important advantage  
of the multilayer is its interdigitated electrode construction within the mass  
of dielectric material. This results in excellent current distribution and the  
peak temperature per energy absorbed is very low. The matrix of semicon-  
ducting grains combine to absorb and distribute transient energy (heat)  
(Figure 11). This dramatically reduces peak temperature; thermal stresses  
and enhances device reliability.  
-9  
-6  
-5  
-4  
-3  
-2  
1E  
1E  
1E  
1E  
1E  
1E  
1E  
SUPPRESSOR CURRENT (A  
DC  
)
FIGURE 10. TYPICAL TEMPERATURE DEPENDANCE OF THE CHARACTERISTIC  
CURVE IN THE LEAKAGE REGION  
Speed of Response  
The Multilayer Suppressor is a leadless device. Its response time is not  
limited by the parasitic lead inductances found in other surface mount  
packages. The response time of the Zinc Oxide dielectric material is less  
than 1 nanosecond and the ML can clamp very fast dV/dT events such  
as ESD. Additionally, in “real world” applications, the associated circuit  
wiring is often the greatest factor effecting speed of response. Therefore,  
transient suppressor placement within a circuit can be considered  
important in certain instances.  
As a measure of the device capability in energy and peak current  
handling, the V26MLA1206A part was tested with multiple pulses at its  
peak current rating (150A, 8/20µs). At the end of the test, 10,000 pulses  
later, the device voltage characteristics are still well within specification  
(Figure 13).  
100  
PEAK CURRENT = 150A  
8/20µs DURATION, 30s BETWEEN PULSES  
FIRED CERAMIC  
DIELECTRIC  
V26MLA1206  
METAL  
ELECTRODES  
10  
METAL END  
0
2000  
4000  
6000  
8000  
10000  
12000  
TERMINATION  
NUMBER OF PULSES  
FIGURE 13. REPETITIVE PULSE CAPABILITY  
DEPLETION  
REGION  
DEPLETION  
REGION  
GRAINS  
FIGURE 11. MULTILAYER INTERNAL CONSTRUCTION  
146  
www. littelfuse. com  
1...4567891011

中文翻译

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V60MLA1210 替代型号

型号 品牌 替代类型 描述 数据表
VC121060J121RP KYOCERA AVX

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V60MLA1210NH LITTELFUSE Varistor, 60V, 1.5J, Surface Mount, CHIP, 1210, ROHS COMPLIANT

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