Datasheet > V50100P_08

V50100P_08

更新时间： 2022-12-16 16:38:09

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	104K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A

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V50100P_08 数据手册

New Product

V50100P

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.375 V at I = 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Solder dip 260 °C, 40 s

TO-247AD (TO-3P)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PIN 2

PIN 1

PIN 3

CASE

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-247AD (TO-3P)

I_F(AV)

2 x 25 A

V_RRM

100 V

350 A

0.64 V

150 °C

Epoxy meets UL 94V-0 flammability rating

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

V_Fat I_F= 25 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs Maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V50100P

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (Fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

per diode

I_FSM

350

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Operating junction and storage temperature range

I_RRM

1.0

T_J, T_STG

- 40 to + 150

°C

Document Number: 88929

Revision: 26-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

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