Datasheet > V20120C_12

V20120C_12

更新时间： 2022-09-15 00:14:00

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	162K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V20120C_12 数据手册

New Product

V20120C, VF20120C, VB20120C & VI20120C

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

I_R= 1.0 mA T_A= 25 °C

V_BR

120 (minimum)

I_F= 5 A

I_F= 10 A

0.62

0.81

_A= 25 °C

0.90

Instantaneous forward voltage per diode ⁽¹⁾

Reverse current per diode ⁽²⁾

V_F

I_F= 5 A

I_F= 10 A

0.54

0.64

T_A= 125 °C

0.72

_A= 25 °C

µA

V_R= 90 V

T_A=125°C

I_R

T_A= 25 °C

700

µA

_R= 120 V

T_A= 125 °C

Notes

⁽¹⁾Pulse test: 300 µs pulse width, 1 % duty cycle

⁽²⁾Pulse test: Pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20120C

VF20120C

VB20120C

VI20120C

UNIT

Typical thermal resistance per diode

R_θJC

2.8

5.0

2.8

°C/W

ORDERING INFORMATION (Example)

PACKAGE

TO-220AB

ITO-220AB

TO-263AB

TO-262AA

PREFERRED P/N

V20120C-E3/4W

VF20120C-E3/4W

VB20120C-E3/4W

VB20120C-E3/8W

VI20120C-E3/4W

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

Tube

1.88

1.75

1.37

1.45

50/tube

Tube

50/tube

Tube

800/reel

Tape and reel

Tube

50/tube

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

Resistive or Inductive Load

V(B,I)20120C

D = 0.8

D = 0.5

D = 0.3

VF20120C

D = 0.2

D = 0.1

D = 1.0

D = t_p/T

t_p

Mounted on Specific Heatsink

100

125

150

175

Case Temperature (°C)

Average Forward Current (A)

Figure 2. Forward Power Loss Characteristics Per Diode

Figure 1. Maximum Forward Current Derating Curve

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 89040

Revision: 24-Jun-09

123 4 5

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