Datasheet > V10WL45-M3

V10WL45-M3

更新时间： 2022-04-26 06:21:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	121K
描述
Trench MOS Barrier Schottky Rectifier

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V10WL45-M3 数据手册

V10WL45-M3

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.33 V at I_F= 5 A

FEATURES

TMBS^®

TO-252 (D-PAK)

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

V10WL45

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

HEATSINK

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

10 A

45 V

Case: TO-252 (D-PAK)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

commercial grade

- halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 10 A (T_A= 125 °C)

T_Jmax.

100 A

0.41 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Package

TO-252 (D-PAK)

Single die

Diode variation

Polarity: As marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

I_F(AV)

V10WL45

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 04-Dec-13

Document Number: 89970

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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