V10PN50-M3
Vishay General Semiconductor
www.vishay.com
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
FEATURES
TMBS® eSMP® Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
1
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
TO-277A (SMPC)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
K
Anode 1
Anode 2
Cathode
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
50 V
MECHANICAL DATA
VRRM
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
IFSM
180 A
0.40 V
150 °C
VF at IF = 10 A
TJ max.
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
Package
TO-277A (SMPC)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variation
M3 suffix meets JESD 201 class 1A whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10PN50
10N5
50
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
10
Maximum average forward rectified current (fig. 1)
Maximum DC reverse voltage
(2)
IF
5.3
VDC
IFSM
35
V
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
180
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Notes
(1)
Mounted on 30 mm x 30 mm 2 oz. pad PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 04-Dec-13
Document Number: 89965
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000