Datasheet > V10PWM12C

V10PWM12C

更新时间： 2024-11-17 14:51:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	135K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 2.5 A

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V10PWM12C 数据手册

V10PWM12C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.54 V at I_F= 2.5 A

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

SlimDPAK (TO-252AE)

- Automotive ordering code: base P/NHM3

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

120 V

80 A

V_RRM

I_FSM

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

V_Fat I_F= 5 A (T_J= 125 °C)

T_Jmax.

0.63 V

175 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SlimDPAK (TO-252AE)

Common cathode

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10PWM12C

UNIT

Device marking code

V10PWM12C

Maximum repetitive peak reverse voltage

V_RRM

120

per device

per diode

(1)

Maximum average forward rectified current (Fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 17-Mar-2022

Document Number: 98211

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V10PWM12C相关器件

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V10PWM45	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
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V10PWM60	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
V10PWM60C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V10PWM63	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky)y Rectifier Ultra Lo
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