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UTT100N08G-TA3-T PDF预览

UTT100N08G-TA3-T

更新时间: 2024-02-18 07:26:28
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
3页 124K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

UTT100N08G-TA3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.13
雪崩能效等级(Eas):875 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):400 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UTT100N08G-TA3-T 数据手册

 浏览型号UTT100N08G-TA3-T的Datasheet PDF文件第2页浏览型号UTT100N08G-TA3-T的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UTT100N08  
Preliminary  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
„
DESCRIPTION  
The UTC UTT100N08 is an N-channel enhancement mode Power  
FET using UTC’s advanced technology to provide customers with a  
minimum on-state resistance and superior switching performance.  
It also can withstand high energy pulse in the avalanche and  
commutation mode.  
„
FEATURES  
* Fast switching speed  
* RDS(ON)= 7m@ VGS=10V  
* Work below 175°C  
* 100% avalanche tested  
* Improved dv/dt capability  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220  
Packing  
Tube  
Lead Free  
Halogen Free  
UTT100N08G-TA3-T  
1
2
3
UTT100N08L-TA3-T  
G
D
S
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
UTT100N08L-TA3-T  
(1)Packing Type  
(1) T: Tube  
(2)Package Type  
(3)Lead Free  
(2) TA3: TO-220  
(3) G: Halogen Free, L: Lead Free  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R502-727.a  

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