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UTT10N10G-TN3-T PDF预览

UTT10N10G-TN3-T

更新时间: 2024-02-28 05:46:53
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
3页 131K
描述
10A, 100V N-CHANNEL MOSFET

UTT10N10G-TN3-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.11
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):10 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):54 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

UTT10N10G-TN3-T 数据手册

 浏览型号UTT10N10G-TN3-T的Datasheet PDF文件第2页浏览型号UTT10N10G-TN3-T的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO., LTD  
UTT10N10  
Preliminary  
Power MOSFET  
10A, 100V N-CHANNEL  
MOSFET  
„
DESCRIPTION  
The UTC UTT10N10 is an N-channel enhancement mode power  
MOSFET using UTC’s advanced technology to provide the  
customers with a minimum on-state resistance, high switching speed  
and ultra low gate charge. It also can withstand high energy pulse in  
the avalanche and commutation mode.  
„
FEATURES  
* RDS(on) =142m@VGS = 10 V,ID=6.4A  
* High Switching Speed  
* Low CRSS (Typically 20pF)  
* Low Gate Charge(Typically 12nC)  
„
SYMBOL  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
3
UTT10N10L-TN3-R  
UTT10N10L-TN3-T  
UTT10N10G-TN3-R  
UTT10N10G-TN3-T  
TO-252  
TO-252  
G
G
S
Tape Reel  
Tube  
S
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-714.a  

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