Datasheet > UT2309-H

UT2309-H

更新时间： 2023-12-06 20:10:47

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UT2309-H 数据手册

UT2309-H

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise noted)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

±20

-3.7

I_DM

-14.8

P_D

1.38

°C

Junction Temperature

Storage Temperature

T_J

+150

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

°C/W

Junction to Ambient (PCB mounted)

Note: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

θ_JA



ELECTRICAL CHARACTERISTICS (T_J= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS=0V, I_D=-250µA

-30

V_DS=-30V,V_GS=0V, T_J= 25°C

V_DS=-24V,V_GS=0V, T_J= 125°C

V_GS=±20V, V_DS=0V

-1

µA

Drain-Source Leakage Current

-10

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

I_GSS

±100 nA

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=-250µA

V_GS=-10V, I_D=-3.0A

-1.2

-2.5

mΩ

Static Drain-Source On-State Resistance

V_GS=-4.5V, I_D=-2.0A

120 mΩ

DYNAMIC PARAMETERS^b

Input Capacitance

C_ISS

C_OSS

C_RSS

425

V_DS=-25V, V_GS=0V, f =1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS^b

Total Gate Charge (Note 1)

Gate Source Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=-10V, V_GS=-4.5V, I_D=-3.0A

Gate Drain Charge

Turn-ON Delay Time (Note 1)

Turn-ON Rise Time

106

186

V_DS=-10V, V_GS=-4.5V, I_D=-1.0A

R_G=10Ω

Turn-OFF Delay Time

Turn-OFF Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_S

-3.7

-14.8

1.4

V_G=V_D=0V , Force Current

I_SM

V_SD

I_S=-3.7A, V_GS=0V, T_J= 25°C

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R210-051.b

www.unisonic.com.tw

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