US3416
N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US3416 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
DSS
BV
DS(ON)
R
ID
20V
28mΩ
4.8A
Applications
The US3416 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
SOT23 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
G
D
S
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
20
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
V
±8
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
5.5
4.4
4.8
3.8
A
A
30
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
1.32
0.84
1
W
W
℃
℃
0.64
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
125
95
RθJA
---
RθJC
---
80
1