Datasheet > US2B

US2B

更新时间： 2024-03-03 10:09:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	222K
描述
SMB

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数据手册

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US2B 数据手册

US2A THRU US2M

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

TEST

US2A US2B US2D US2F US2G US2J US2K US2M

PARAMETER

SYMBOL

UNIT

CONDITIONS

Maximum instantaneous

forward voltage drop per diode

=2.0A

1.0

1.3

1.7

I_F=0.5A,I_R=1.0A,

I_rr=0.25A

Maximum reverse recovery time

t_rr

5.0

T =25℃

Maximum DC reverse current at

rated DC blocking voltage per

diode

μA

100

T =125℃

Thermal Characteristics （T =25℃ Unless otherwise specified）

■

US2A

US2B

US2D

US2F

US2G

US2J

US2K

US2M

PARAMETER

SYMBOL

UNIT

70¹⁾

22¹⁾

18¹⁾

θJ-A

Typical Thermal Resistance

θJ-L

℃/W

θJ-C

Note:

(1)

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas

Characteristics (Typical)

■

FIG.1: Io-TL Cure

FIG.2: Forward Surge Current Capability

2.80

2.40

2.00

1.60

1.20

0.80

0.40

8.3ms Single Half Sine Wave

JEDEC Method

60Hz Resistive or Inductive Load

P.C.B. Mounted on 0.3"×0.3"(8.0mm×8.0mm)

Copper Pad Areas

120

150

100

40 60

8 10

Lead Temperature(℃)

Number of Cycles

2 / 5

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S4037

Rev. 1.1, 20-Sep-22

www.21yangjie.com

123 4 5

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