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UPD78F0034BY PDF预览

UPD78F0034BY

更新时间: 2024-02-09 14:55:56
品牌 Logo 应用领域
日电电子 - NEC 微控制器
页数 文件大小 规格书
90页 652K
描述
8-BIT SINGLE-CHIP MICROCONTROLLERS

UPD78F0034BY 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:0.750 INCH, PLASTIC, SHRINK, DIP-64Reach Compliance Code:compliant
风险等级:5.81Is Samacsys:N
具有ADC:YES地址总线宽度:16
位大小:8最大时钟频率:8.38 MHz
DAC 通道:NODMA 通道:NO
外部数据总线宽度:8JESD-30 代码:R-PDIP-T64
JESD-609代码:e0长度:57.655 mm
I/O 线路数量:51端子数量:64
最高工作温度:85 °C最低工作温度:-40 °C
PWM 通道:YES封装主体材料:PLASTIC/EPOXY
封装代码:SDIP封装形状:RECTANGULAR
封装形式:IN-LINE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not QualifiedROM可编程性:FLASH
座面最大高度:5.08 mm速度:8.38 MHz
最大供电电压:5.5 V最小供电电压:1.8 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:1.778 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:19.05 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER
Base Number Matches:1

UPD78F0034BY 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD78F0034B, 78F0034BY, 78F0034B(A), 78F0034BY(A)  
8-BIT SINGLE-CHIP MICROCONTROLLERS  
DESCRIPTION  
The µPD78F0034B is a member of the µPD780034A Subseries in the 78K/0 Series, and is equivalent to the  
µPD780034A (expanded-specification product) but with flash memory in place of internal ROM.  
The µPD78F0034BY is a member of the µPD780034AY Subseries, featuring flash memory in place of the internal  
ROM of the µPD780034AY.  
The µPD78F0034B(A) and 78F0034BY(A) are products to which a quality assurance program more stringent than  
that used for the µPD78F0034B and 78F0034BY (standard models) is applied (NEC Electronics classifies these  
products as "special" quality grade models).  
The µPD78F0034B, 78F0034BY, 78F0034B(A), and 78F0034BY(A) incorporate flash memory, which can be  
programmed and erased while mounted on the board.  
Detailed function descriptions are provided in the following user’s manuals. Be sure to read them before  
designing.  
µPD780024A, 780034A, 780024AY, 780034AY Subseries User’s Manual: U14046E  
78K/0 Series Instruction User’s Manual: U12326E  
FEATURES  
Pin-compatible with mask ROM versions (except VPP pin)  
Flash memory:  
32 KBNote  
Internal high-speed RAM: 1,024 bytesNote  
Supply voltage: VDD = 1.8 to 5.5 V  
Note The flash memory and internal high-speed RAM capacities can be changed with the memory size switching  
register (IMS).  
Remark For the differences between the flash memory and the mask ROM versions, refer to 4. DIFFERENCES  
BETWEEN µPD78F0034B, 78F0034BY, AND MASK ROM VERSIONS.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. U16369EJ1V0DS00 (1st edition)  
Date Published January 2003 N CP(K)  
Printed in Japan  
©

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