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UPC24M05A PDF预览

UPC24M05A

更新时间: 2024-01-21 15:41:29
品牌 Logo 应用领域
其他 - ETC 三端稳压器
页数 文件大小 规格书
35页 186K
描述
Useage of Three-Terminal Regulators | User's Manual[05/2000]

UPC24M05A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, SIP3,.1ISO-TB
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.8
可调性:FIXED最大回动电压 1:1 V
标称回动电压 1:0.5 V最大绝对输入电压:36 V
最大输入电压:20 V最小输入电压:6 V
JESD-30 代码:R-PSFM-T3JESD-609代码:e6
最大电网调整率:0.05%最大负载调整率:0.025%
功能数量:1输出次数:1
端子数量:3工作温度TJ-Max:125 °C
工作温度TJ-Min:-20 °C最大输出电流 1:0.5 A
最大输出电压 1:5.15 V最小输出电压 1:4.85 V
标称输出电压 1:5 V封装主体材料:PLASTIC/EPOXY
封装代码:TO-220封装等效代码:SIP3,.1ISO-TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
调节器类型:FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR子类别:Other Regulators
表面贴装:NO技术:BIPOLAR
端子面层:TIN BISMUTH端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:3%
Base Number Matches:1

UPC24M05A 数据手册

 浏览型号UPC24M05A的Datasheet PDF文件第3页浏览型号UPC24M05A的Datasheet PDF文件第4页浏览型号UPC24M05A的Datasheet PDF文件第5页浏览型号UPC24M05A的Datasheet PDF文件第7页浏览型号UPC24M05A的Datasheet PDF文件第8页浏览型号UPC24M05A的Datasheet PDF文件第9页 
Figure 2-2. Structure of Resistor  
Base diffused resistor  
Base pinch resistor  
Separation region  
P-type diffusion  
Epitaxial layer  
electrode  
Separation region  
Resistor  
electrode  
n+ diffusion layer  
Resistor  
electrode  
P-type diffusion  
layer  
Resistor  
electrode  
Resistor  
electrode  
Separation  
region  
Pinch  
region  
layer  
n+  
n
n
p
p
p
n+  
n+  
P-type substrate  
Figure 2-3. Structure of Capacitor  
MOS capacitor  
Junction capacitor  
Oxide  
layer  
Separation region  
n
Separation region  
p
+
Separation region  
AI electrode  
p
n+  
n+  
p
p
n
n+  
P-type substrate  
P-type substrate  
There is a point to heed in applying power supply ICs. It is that a method known as "junction separation" is used  
as the method of electrically separating each of the elements above. By connecting a separation region so that it is  
formed by a P-type semiconductor and is the same lowest potential as the substrate, the element region and the  
separation region are electrically separated and insulated by being in (PN junction) reverse bias states. If for some  
reason the potential of this separation region becomes a higher potential than the element region (for example the  
NPN transistor collector region in Figure 2-1), normal operation cannot be expected since the PN junction enters a  
forward bias state and the separation state between the elements cannot be maintained. For example, when using a  
positive output three-terminal regulator, the GND pin always must be made a lower potential than the potential of  
other pins.  
2.2 About Power Supply IC Equivalent Circuits  
Equivalent circuits that are shown in data sheets are so designated assuming the premise of the preceding  
section (that separation regions and substrate are made the lowest potential). Be careful not to reference these  
when this premise is violated.  
6
User’s Manual G12702EJ8V0UM00  

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