是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.1 | 最大集电极电流 (IC): | 0.03 A |
基于收集器的最大容量: | 0.9 pF | 集电极-发射极最大电压: | 12 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA803T-T1-A | NEC |
获取价格 |
暂无描述 | |
UPA803T-T1FB | NEC |
获取价格 |
暂无描述 | |
UPA803T-T1FB | RENESAS |
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2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6 | |
UPA803T-T1FB-A | NEC |
获取价格 |
暂无描述 | |
UPA803T-T1GB | NEC |
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暂无描述 | |
UPA803T-T1GB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili | |
UPA804 | NEC |
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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA | |
UPA804T | NEC |
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SILICON TRANSISTOR | |
UPA804T-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.06A I(C), 2-Element, Ultra High Frequency Band, Sili | |
UPA804TC | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA |