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UPA801TC

更新时间： 2024-02-19 16:54:58
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
12页 77K
描述
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

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中文翻译

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UPA801TC 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.59最大集电极电流 (IC)：0.1 A
基于收集器的最大容量：1.5 pF集电极-发射极最大电压：12 V
配置：SEPARATE, 2 ELEMENTS最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G6JESD-609代码：e6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：4500 MHz
Base Number Matches：1

UPA801TC 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA801TC  
NPN SILICON EPITAXIAL TRANSISTOR  
(WITH BUILT-IN 2 × 2SC5006)  
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
DESCRIPTION  
The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band  
to the UHF band.  
FEATURES  
•
•
•
•
Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
Flat-lead 6-pin thin-type ultra super minimold package  
Built-in 2 transistors (2 × 2SC5006)  
ORDERING INFORMATION  
Part Number  
Package  
Quantity  
Supplying Form  
Embossed tape 8 mm wide.  
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to  
µPA801TC  
Flat-lead 6-pin  
Loose products  
(50 pcs)  
thin-type ultra  
super minimold  
perforation side of the tape  
.
µPA801TC-T1  
Taping products  
(3 kp/reel)  
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:  
µPA801TC. Unit sample quantity is 50 pcs.)  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
20  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCEO  
12  
V
VEBO  
3
V
IC  
100  
mA  
mW  
PTNote  
Total Power Dissipation  
200 in 1 element  
230 in 2 elements  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.  
Caution Electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. P14548EJ1V1DS00 (1st edition)  
Date Published February 2000 N CP(K)  
Printed in Japan  
1999  
©
1234567...12

中文翻译

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与UPA801TC相关器件

型号 品牌 获取价格 描述 数据表
UPA801TC-A RENESAS

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 		2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKA
UPA801TC-FB RENESAS

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 		2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKA
UPA801TCFB-A NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801TCFB-T1 NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801TCFB-T1-A NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801TCGB NEC

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 		2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKA
UPA801TC-GB RENESAS

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 		2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKA
UPA801TC-GB-A NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801TCGB-T1 NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801TCGB-T1-A NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic

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