UPA801TF

更新时间： 2024-01-21 12:38:41

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
1页	18K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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技术参数
数据手册

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UPA801TF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.59	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	1.5 pF	集电极-发射极最大电压：	12 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G6	JESD-609代码：	e6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4500 MHz
Base Number Matches：	1

UPA801TF 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA801TF

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE OUTLINE:

SOT-363 package measures just 2.0 mm x 1.25 mm

PACKAGE OUTLINE TS06

(Top View)

•

LOW HEIGHT PROFILE:

Just 0.60 mm high

2.1 ± 0.1

1.25 ± 0.1

HIGH COLLECTOR CURRENT:

IC MAX = 100 mA

0.65

+0.10

- 0.05

2.0 ± 0.2

DESCRIPTION

(All Leads)

0.22

1.3

The UPA801TF contains two NE856 NPN high frequency

siliconbipolarchips. NEC'snewlowprofileTFpackageisideal

for all portable wireless applicatons where reducing compo-

nent height is a prime consideration. Each transistor chip is

independently mounted and easily configured for two stage

cascade LNAs and other similar applications.

0.6 ± 0.1

0.45

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

0.13 ±0.05

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

0 ~ 0.1

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

PIN OUT

Note:

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

Pin 1 is the lower left most pin as

the package lettering is oriented

and read left to right.

100

Total Power Dissipation

1 Die

2 Die

110

200

Junction Temperature

Storage Temperature

°C

150

TSTG

-65 to +150

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA801TF

TS06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

1.0

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain¹at VCE = 3 V, IC = 7 mA

µA

1.0

120

4.5

0.7

250

Gain Bandwidth at VCE = 3 V, IC = 7 mA

GHz

3.0

Cre

|S21E|²

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

1.5

2.5

1.2

hFE1 = Smaller Value of Q1 or Q2

hFE Ratio:

0.85

hFE1/hFE2

hFE2 = Larger Value pf Q1 or Q2

Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use

part number UPA801TF-T1, 3K per reel.

California Eastern Laboratories

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

2/99

DATA SUBJECT TO CHANGE WITHOUT NOTICE

中文翻译

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与UPA801TF相关器件

型号	品牌	获取价格	描述	数据表
UPA801T-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801T-FB-A	NEC	获取价格	暂无描述
UPA801TF-T1	NEC	获取价格	BJT
UPA801T-GB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801T-T1	RENESAS	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA801T-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801T-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY
UPA801T-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801T-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA801T-T1GB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic

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