Datasheet > UPA801TCGB

UPA801TCGB

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	77K
描述
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPA801TCGB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA801TC

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 × 2SC5006)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION

The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band

to the UHF band.

FEATURES

•

Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

High gain: |S^21e|²= 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

Flat-lead 6-pin thin-type ultra super minimold package

Built-in 2 transistors (2 × 2SC5006)

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

Embossed tape 8 mm wide.

Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to

µPA801TC

Flat-lead 6-pin

Loose products

(50 pcs)

thin-type ultra

super minimold

perforation side of the tape

µPA801TC-T1

Taping products

(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA801TC. Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

VCBO

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCEO

VEBO

100

_PTNote

Total Power Dissipation

200 in 1 element

230 in 2 elements

Junction Temperature

Storage Temperature

150

˚C

Tstg

–65 to +150

Note Mounted on 1.08 cm²× 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

Document No. P14548EJ1V1DS00 (1st edition)

Date Published February 2000 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...12

下载PDF

与UPA801TCGB相关器件

型号	品牌	描述	获取价格	数据表
UPA801TC-GB	RENESAS	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKA	获取价格
UPA801TC-GB-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic	获取价格
UPA801TCGB-T1	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic	获取价格
UPA801TCGB-T1-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic	获取价格
UPA801TC-T1	NEC	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA	获取价格
UPA801TC-T1-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic	获取价格