Datasheet > UNR911FG0L

UNR911FG0L

更新时间： 2025-09-22 19:15:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
20页	618K
描述
元器件封装:SS迷你型3-F3;

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中文翻译

获取价格

数据手册
替代型号

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UNR911FG0L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors with built-in Resistor

UNR911xG Series

Silicon PNP epitaxial planar type

For digital circuits

■ Package

■ Features

•

Code

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• SS-Mini type package, allowing automatic insertion through tape

packing.

SSMini3-F3

Pin Name

1: Base

•

2: Emitter

3: Collector

■ Resistance by Part Number

Marking Symbol (R₁)

(R₂)



■ Internal Connection

• UNR9110G

• UNR9111G

• UNR9112G

• UNR9113G

• UNR9114G

• UNR9115G

• UNR9116G

• UNR9117G

• UNR9118G

• UNR9119G

• UNR911AG

• UNR911BG

• UNR911CG

• UNR911DG

• UNR911EG

• UNR911FG

• UNR911HG

• UNR911LG

• UNR911MG

• UNR911NG

• UNR911TG

• UNR911VG

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

10 kΩ

22 kΩ

47 kΩ



5.1 kΩ

10 kΩ

100 kΩ



47 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

R₁

R₂

100 kΩ



47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

T_j

−100

°C

Total power dissipation

Junction temperature

Storage temperature

125

T_stg

−55 to +125

°C

Publication date: July 2007

SJH00222AED

12 3 4 5 6 7...20

中文翻译

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UNR911FG0L 替代型号

型号	品牌	替代类型	描述	数据表
DTA143XEBTL	ROHM	功能相似	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO

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