Datasheet > UNR4222|UN4222

UNR4222|UN4222

更新时间： 2022-01-18 16:03:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	144K
描述
Composite Device - Transistors with built-in Resistor

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UNR4222|UN4222 数据手册

Transistors with built-in Resistor

UNR4221/4222/4223/4224

(UN4221/4222/4223/4224)

Unit: mm

Silicon NPN epitaxial planar type

4.0 0.2

2.0 ^0.2

For digital circuits

0.75 max.

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• New S type package, allowing supply with the radial taping

+0.20

0.45

–0.10

■ Resistance by Part Number

+0.20

0.45

–0.10

(2.5) (2.5)

(R₁)

(R₂)

0.7 ^0.1

•

UNR4221 (UN4221)

UNR4222 (UN4222)

UNR4223 (UN4223)

UNR4224 (UN4224)

2.2 kΩ

4.7 kΩ

10 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

1: Emitter

2: Collector

3: Base

NS-B1 Package

Internal Connection

■ Absolute Maximum Ratings T_a= 25°C

R₁

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

R₂

Collector current

I_C

P_T

500

°C

300

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

1.0

5.0

2.0

1.0

µA

I_CEO

Emitter-base

cutoff current

UNR4221

UNR4222

I_EBO

(Collector open) UNR4223/4224

Forward current

transfer ratio

UNR4221

h_FE

V_CE= 10 V, I_C= 100 mA



UNR4222

UNR4223/4224

Collector-emitter saturation voltage

Output voltage high-level

V_CE(sat)

V_OH

I_C= 100 mA, I_B= 5 mA

0.25

0.2

V_CC= 5 V, V_B= 0.5 V, R_L= 500 Ω

V_CC= 5 V, V_B= 3.5 V, R_L= 500 Ω

4.9

Output voltage low-level

V_OL

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00021BED

12 3 4 5 6

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型号	品牌	描述	获取价格	数据表
UNR4223	PANASONIC	Silicon NPN epitaxial planar type	获取价格
UNR4223(UN4223)	ETC	複合デバイス－抵抗内蔵型トランジスタ	获取价格
UNR4223\|UN4223	ETC	Composite Device - Transistors with built-in Resistor	获取价格
UNR4224	PANASONIC	Silicon NPN epitaxial planar type	获取价格
UNR4224(UN4224)	ETC	複合デバイス－抵抗内蔵型トランジスタ	获取价格
UNR4224\|UN4224	ETC	Composite Device - Transistors with built-in Resistor	获取价格