Datasheet > UNR411L00A

UNR411L00A

更新时间： 2025-09-22 19:05:35

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
15页	532K
描述
元器件封装:NS-B1;

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中文翻译

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数据手册

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UNR411L00A 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors with built-in Resistor

UNR411x Series (UN411x Series)

Silicon PNP epitaxial planar type

Unit: mm

4.0 0.2

2.0 ^0.2

For digital circuits

0.75 max.

■ Features

•

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

•

New S type package, allowing supply with the radial taping

■ Resistance by Part Number

(R₁)

(R₂)



+0.20

0.45

–0.10

•

UNR4110 (UN4110)

UNR4111 (UN4111)

UNR4112 (UN4112)

UNR4113 (UN4113)

UNR4114 (UN4114)

UNR4115 (UN4115)

UNR4116 (UN4116)

UNR4117 (UN4117)

UNR4118 (UN4118)

UNR4119 (UN4119)

UNR411D (UN411D)

UNR411E (UN411E)

UNR411F (UN411F)

UNR411H (UN411H)

UNR411L (UN411L)

UNR411M

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

+0.20

0.45

–0.10

(2.5) (2.5)

10 kΩ

22 kΩ

47 kΩ



0.7 ^0.1

1: Emitter

2: Collector

3: Base

NS-B1 Package



Internal Connection

5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

R₁

R₂

UNR411N

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

−100

°C

300

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00018DED

12 3 4 5 6 7...15

中文翻译

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与UNR411L00A相关器件

型号	品牌	获取价格	描述	数据表
UNR411LR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR411L\|UN411L	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411M	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR411M(UN411M)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411MQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR411MR	PANASONIC	获取价格	暂无描述
UNR411M\|UN411M	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411N	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR411N(UN411N)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR411NS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,