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UNR2217Q PDF预览

UNR2217Q

更新时间: 2024-01-31 10:44:14
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 283K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59

UNR2217Q 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):290
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

UNR2217Q 数据手册

 浏览型号UNR2217Q的Datasheet PDF文件第2页浏览型号UNR2217Q的Datasheet PDF文件第3页浏览型号UNR2217Q的Datasheet PDF文件第4页浏览型号UNR2217Q的Datasheet PDF文件第5页浏览型号UNR2217Q的Datasheet PDF文件第6页浏览型号UNR2217Q的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/  
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z  
(UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/  
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z)  
Unit: mm  
Silicon NPN epitaxial planer transistor  
2.8 +00..32  
1.5 +00..0255  
0.65±0.15  
0.65±0.15  
For digital circuits  
1
2
Features  
3
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through tape packing and magazine packing.  
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
47kΩ  
47kΩ  
47kΩ  
2.2kΩ  
22kΩ  
0.1 to 0.3  
UNR2211  
UNR2212  
UNR2213  
UNR2214  
UNR2215  
UNR2216  
UNR2217  
UNR2218  
UNR2219  
UNR2210  
UNR221D  
UNR221E  
UNR221F  
UNR221K  
UNR221L  
UNR221M  
UNR221N  
UNR221T  
UNR221V  
UNR221Z  
8A  
8B  
8C  
8D  
8E  
8F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
22kΩ  
2.2kΩ  
4.7kΩ  
0.4±0.2  
1:Base  
2:Emitter  
EIAJ:SC-59  
Mini Type Package  
3:Collector  
8H  
8I  
Internal Connection  
8K  
8L  
8M  
8N  
8O  
8P  
8Q  
EL  
EX  
EZ  
FD  
FF  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
200  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The part numbers in the parenthesis show conventional part number.  
1

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